ONLINEMEETING
POWERING
THE FUTURE
WITH SiC
SOLAR & ESS
Bringing the benefits of greater efficiency, power density, and reliability at lower cost to solar and energy storage systems (ESS), silicon carbide (SiC) power modules help tap the power of renewables to pave the way toward a more sustainable and energy-efficient future.
Based on real-world data, the diagram below shows how SiC-based power modules boost efficiency in PV inverter and ESS use cases.
PV inverter and ESS
SiC vs. Si Diode
SiC diodes are already well-established in hybrid power modules (Si-IGBT with SiC FWD) for PV inverters, particularly utility-scale string inverters. This brings benefits such as the elimination of reverse recovery losses, as well as reduced turn-on losses, and thermal stress in IGBTs.
- Eliminated reverse recovery losses in neutral point clamped diodes
- Reduced turn-on losses in IGBTs and junction temperatures
- Reduced EMI noise
SiC MOSFET vs. Hybrid
The significance of SiC MOSFETs has risen, notably in next-generation bi-directional power conversion systems (PCS), as a result of the increased power density, enhanced efficiency, overload capability and reduced operating costs they enable.
- Superior efficiency due to significant reduction in dynamic losses and comparable conduction losses
- Better overload capability
- Reduced cooling efforts
- Lower operating costs (€/kWh)
Switching from Si to SiC
These graphics clearly map out the design trade-offs engineers can make as they move from Si to SiC technology when designing for PV and ESS applications:
- Extended life time by lower thermal stress when switching at Si-level switching frequencies (fsw)
- Smaller, cheaper filter inductors: up to 2/3 higher switching frequencies (fsw) at comparable junction temperatures (Tj)
- Higher output power from the same housing footprint at similar junction temperatures (Tj) and switching frequency (fsw)
Interested in learning more? Find a suitable product for your application and get simulation data using VINcoSIM.