For the DC-DC power conversion stage mainly isolated topologies are employed like the full-bridge or three-phase LLC resonant converter, and the full-bridge phase-shift DAB. The first one is a pure frequency modulated configuration and the second operates with PWM.
In this stage, SiC MOSFET chip technology is essential to meeting switching frequency (>100 kHz) and peak efficiency (>98.5%) requirements. A 1200 V SiC MOSFET streamlines the topology by transitioning from a two cascaded interleaved LLC with 650V Si components to a single full-bridge LLC.
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Vincotech fastPACK SiC product line is offering a comprehensive product portfolio with H-bridge (full-bridge), featuring:
| Housing | H-bridge | 2ph Ultrafast Rectifier | 3ph Ultrafast Rectifier |
|---|---|---|---|
| flow 0 |
650 V - show products
1200 V - show products
|
650 V - show products
|
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| flow 0 SiC |
1200 V - show products
900 V - show products
650 V - in concept
|
650 V - show products |
|
| flow 1 | 650 V - show products
1200 V - show products |
650 V - show products
1200 V - show products |
650 V - show product |
| flow 1 SiC | 650 V - show products
1200 V - show products |
||
| flow E1 SiC |
1200 V - show products
650 V - in concept
|
1200 V - show products
|
|
| flow E2 SiC |
1200 V - show products
|
1200 V - show product |
|
| flow S3 SiC |
1200 V - show products
|